| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| A8NAGH50DBA-PK |
|
DDR存储器 |
ZENTEL/力积 |
200BallFBGA |
25+ |
5 |
||
| NT5CC128M16IP-DI | 存储IC |
NANYA/南亚 |
21+ |
9000 |
||||
| MN54L-C10 |
|
通讯模块 |
ARAD/爱瑞德 |
25+ |
6 |
|||
| MX25L25735FZ2I-10G | IC |
MXIC/旺宏 |
WSON-8 |
1440 |
||||
| IS21ES08GA-JCLI | ISSI/芯成 |
28000 |
||||||
| PDTC114ET,215 | NEXPERIA/安世 |
28000 |
||||||
| TW045Z120C,S1F | INFINEON/英飞凌 |
6000 |
||||||
| NCP1252ADR2G | 稳压IC |
ONSEMI/安森美 |
7500 |
|||||
| 74HC4066PW,112 | 模拟IC |
NEXPERIA/安世 |
50 |
|||||
| TPS54335ADRCR | 电源IC |
TI/德州仪器 |
6000 |
|||||
| PBSS5350T | 贴片三极管 |
NEXPERIA/安世 |
6000 |
|||||
| PSMN1R5-30YLC | 低压MOS管 |
NEXPERIA/安世 |
7500 |
|||||
| F3L300R07PE4 | IGBT管 |
INFINEON/英飞凌 |
10000 |
|||||
| GDP1BFLM-CB | 存储IC |
GD/兆易创新 |
96-FBGA |
24+ |
11800 |
|||
| W25N01GVZEIG | FLASH存储器 |
WINBOND/华邦 |
WSON8 |
24+ |
26880 |
|||
| MN52M-C11 |
|
通讯模块 |
ARAD/爱瑞德 |
Module |
25+ |
200 |
||
| A8XBGH52ABA-PMI | DDR存储器 |
ZENTEL/力积 |
24+ |
1200 |
||||
| MN54L-P10 |
|
通讯模块 |
ARAD/爱瑞德 |
25+ |
6 |
|||
| MN54L-P05 |
|
通讯模块 |
ARAD/爱瑞德 |
25+ |
6 |
|||
| MN54L-C05 |
|
通讯模块 |
ARAD/爱瑞德 |
25+ |
6 |
|||
| W25Q512JVFIQ | IC |
WINBOND/华邦 |
SOP16 |
25+ |
8000 |
|||
| MX25L4006EM1I-12G | IC |
MXIC/旺宏 |
SOP-8 |
980 |
||||
| BN52M-P32 |
|
开发板 |
ARAD/爱瑞德 |
10 |
||||
| BN52H-P33 |
|
开发板 |
ARAD/爱瑞德 |
43 |
||||
| MN52M-C32 |
|
通讯模块 |
ARAD/爱瑞德 |
Module |
100 |
|||
| PCA9557PW,118 | 接口IC |
NXP/恩智浦 |
TSSOP16 |
5000 |
||||
| A3V64S40GTP-60 | DDR存储器 |
ZENTEL/力积 |
1080 |
|||||
| PESD4V0Z1BSFYL | NEXPERIA/安世 |
24000 |
||||||
| 74LVXC3245MTCX | 其他被动元件 |
ONSEMI/安森美 |
10000 |
|||||
| MC74HC151ADR2G | 逻辑IC |
ONSEMI/安森美 |
15000 |